| PART |
Description |
Maker |
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| 24AA02-I/OT 24LC02B-I/MS 24LC02B-E/P 24LC02B-I/ST |
SERIAL EEPROM|256X8|CMOS|TSSOP|8PIN|PLASTIC
SERIAL EEPROM|256X8|CMOS|TSOP|6PIN|PLASTIC
3.3V Single-Piece 1Mb Nonvolatile SRAM
3.3V Single-Piece 256Kb Nonvolatile SRAM
Single/Dual/Triple/Quad DS3/E3 Single-Chip Transceivers
Single/Dual/Triple/Quad ATM/Packet PHYs for DS3/E3/STS-1 串行EEPROM的| 256X8 |的CMOS |双酯| 8引脚|塑料
Single-Piece 1Mb Nonvolatile SRAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
2k x 8 3V/5V Operation Static RAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
Single/Dual/Triple/Quad ATM/Packet PHYs with Built-In LIU 串行EEPROM的| 256X8 |的CMOS |专科| 8引脚|塑料
|
Microchip Technology, Inc.
|
| DS2045L |
3.3V Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
| DS2045W-100 DS2045W |
3.3V Single-Piece 1Mb Nonvolatile SRAM
|
MAXIM[Maxim Integrated Products]
|
| DS2045Y DS2045AB |
Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
| DS3070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 3.3V的单16Mb的非易失SRAM，带有时
|
Maxim Integrated Products, Inc.
|
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| DS2045Y-70 DS2045Y-100 |
Single-Piece 1Mb Nonvolatile SRAM 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PBGA256
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| M29F032D M29F032D70 7946 M29F032D70N1 M29F032D70N1 |
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 / Uniform Block 5V Supply Flash Memory
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 Uniform Block 5V Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| HIF6-040PA-1.27DS HIF6-040PA-1.27DSA HIF6-020PA-1. |
1.27mm Pitch Two-Piece Connectors
|
Hirose Electric
|
| V5744S |
One-Piece Steel Surface Raceway
|
List of Unclassifed Man...
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